Abstract：The active gate drive (AGD) method has been developed to optimize the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) switching behavior by controlling the gate side. However, verification of current AGD methods has been limited to double-pulse tests, which fail to show practical values for AGD methods in converters and fail to show the AGD capabilities for continuous operations. The authors have presented an AGD method targeting insulted gate bipolar transistors (IGBTs). This paper ajusts this AGD method for SiC MOSFETs with parameter compensation. The accuracy of this modified AGD method is then compared with conventional gate drives (CGD) and existing AGD methods via double-pulse tests. In the double-pulse tests, this AGD method reduces the turn-on delay and its loss by 53% and 30%, and reduces the turn-off delay and its loss by 65% and 67%. This AGD method is then applied to a Buck converter to verify how it improves the switching spikes and converter efficiency. For a given spike, this AGD method improves the converter efficiency by 0.3% to 1% compared with the CGD method.
凌亚涛, 赵争鸣. 自调节驱动对SiC MOSFET变换器性能的提升[J]. 清华大学学报（自然科学版）, 2021, 61(10): 1079-1087.
LING Yatao, ZHAO Zhengming. Improvement of SiC MOSFET based converters with self-regulating drive. Journal of Tsinghua University(Science and Technology), 2021, 61(10): 1079-1087.
[1] 赵争鸣, 施博辰, 朱义诚. 对电力电子学的再认识:历史、现状及发展[J]. 电工技术学报, 2017, 32(12):5-15.ZHAO Z M, SHI B C, ZHU Y C. Reconsideration on power electronics[J]. Transactions of China Electrotechnical Society, 2017, 32(12):5-15. (in Chinese) [2] 盛况, 任娜, 徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6):1741-1752. SHENG K, REN N, XU H Y. A recent review on silicon carbide power devices technologies \[J]. Proceedings of the CSEE, 2020, 40(6):1741-1752. (in Chinese) [3] 朱义诚, 赵争鸣, 施博辰, 等. 绝缘栅型功率开关器件栅极主动控制技术综述[J]. 高电压技术, 2019, 45(7):2080-2092. ZHU Y C, ZHAO Z M, SHI B C, et al. Review of active gate control methods for insulated-gate power switching devices[J]. High Voltage Engineering, 2019, 45(7):2080-2092. (in Chinese) [4] 曾正, 邵伟华, 陈昊, 等. 基于栅极驱动回路的SiC MOSFET开关行为调控[J]. 中国电机工程学报, 2018, 38(4):254-264. ZENG Z, SHAO W H, CHEN H, et al. Off-behavior control of SiC MOSFET by gate drive loops[J]. Proceedings of the CSEE, 2018, 38(4):1165-1176. (in Chinese) [5] 张建忠, 吴海富, 张雅倩, 等. 一种SiC MOSFET谐振门极驱动电路[J]. 电工技术学报, 2020, 35(16):3453-3459. ZHANG J Z, WU H F, ZHANG Y Q, et al. A resonant gate driver for SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2020, 35(16):3453-3459. (in Chinese) [6] 董振邦, 徐云飞, 李卫国, 等. 应用于电力系统的SiC MOSFET器件开关特性优化控制方法[J]. 中国电机工程学报, 2020, 40:254-264. DONG Z B, XU Y F, LI W G, et al. Optimized control method for switching characteristics of SiC MOSFET devices applied to power systems[J]. Proceedings of the CSEE, 2020, 40:254-264. (in Chinese) [7] MIYAZAKA K, ABE S, TSUKUDA M, et al. General-purpose clocked gate driver IC with programmable 63-level drivability to optimize overshoot and energy loss in switching by a simulated annealing algorithm[J]. IEEE Transactions on Industry Applications, 2017, 53(3):2350-2357. [8] CHENNU J, MAHESHWARI R, LI H. New resonant gate driver circuit for high-frequency application of silicon carbide MOSFETs[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10):8277-8287. [9] HAN Y, LU H F, LI Y D, et al. Open-loop gate control for optimizing the turn-on transition of SiC MOSFETs[J]. IEEE Transactions on Emerging and Selected Topics in Power Electronics, 2019, 7(2):1126-1136. [10] 乔小可, 杨媛, 王庆军. SiC MOSFET开关特性及多等级栅电压驱动电路[J]. 电力电子技术, 2019, 53(3):17-20. QIAO X K, YANG Y, WANG Q J. Research on switching characteristics and multi-level gate voltage drive circuit of SiC MOSFET[J]. Power Electronics, 2019, 53(3):17-20. (in Chinese) [11] 文阳. SiC_MOSFET模块驱动保护电路研究[D]. 西安:西安理工大学, 2020. WEN Y. Study on SiC MOSFET module drive and protection circuit[D]. Xi'an:Xi'an University of Technology, 2020. (in Chinese) [12] YANG Y, WEN Y, GAO Y. A novel active gate driver for improving switching performance of high-power SiC MOSFET modules[J]. IEEE Transactions on Power Electronics, 2019, 34(8):7775-7787. [13] SUKHATME Y, MIRYALA V, GANESAN P, et al. Digitally controlled gate current source-based active gate driver for silicon carbide MOSFETs[J]. IEEE Transactions on Industrial Electronics, 2020, 67(12):10121-10133. [14] CAMACHO A, SALA V, GHORBANI H, el al. A novel active gate driver for improving SiC MOSFET switching trajectory[J]. IEEE Transactions on Industrial Electronics, 2017, 64(11):9032-9042. [15] 刘平, 李海鹏, 苗轶如, 等. 基于驱动电流动态调节的低过冲低损SiC MOSFET有源门极驱动[J]. 中国电机工程学报, 2020, 40(18):5730-5741. LIU P, LI H P, MIAO Y R, et al. Low overshoot and low loss active gate driver for SiC MOSFET based on driving current dynamic regulating[J]. Proceedings of the CSEE, 2020, 40(18):5730-5741. (in Chinese) [16] 李先允, 卢乙, 倪喜军, 等. 一种改进SiC_MOSFET开关性能的有源驱动电路[J]. 中国电机工程学报, 2020, 40(18):5760-5769. LI X Y, LU Y, NI X J, et al. An active gate driver for improving switching performance of SiC MOSFET[J]. Proceedings of the CSEE, 2020, 40(18):5760-5769. (in Chinese) [17] 徐建清, 高勇, 杨媛, 等. SiC MOSFET驱动电路设计及特性分析[J]. 半导体技术, 2020, 45(5):352-359. XU J Q, GAO Y, YANG Y, et al. Driving circuit design and performance analysis for SiC MOSFET[J]. Semiconductor Devices, 2020, 45(5):352-359. (in Chinese) [18] ZHAO S, DEARIEN A, WU Y, et al. Adaptive multi-level active gate drivers for SiC power devices[J]. IEEE Transactions on Power Electronics, 2020, 35(2):1882-1898. [19] ZHAO S, ZHAO X C, DEARIEN A, et al. An intelligent versatile model-based trajectory optimized active gate driver for silicon carbide devices[J]. IEEE Transactions on Emerging and Selected Topics in Power Electronics, 2020, 8(1):429-441. [20] 李辉, 黄樟坚, 廖兴林, 等. 一种抑制SiC MOSFET桥臂串扰的改进门极驱动设计[J]. 电工技术学报, 2019, 34(2):275-285.LI H, HUANG Z J, LIAO X L, et al. An improved SiC MOSFET gate driver design for crosstalk suppression in a phase-leg configuration[J]. Transactions of China Electrotechnical Society, 2019, 34(2):275-285.(in Chinese) [21] 冯超, 李虹, 蒋艳峰, 等. 抑制瞬态电压电流尖峰和振荡的电流注入型SiC MOSFET有源驱动方法研究[J]. 中国电机工程学报, 2019, 39(19):5666-5673. FENG C, LI H, JIANG Y F, et al. Research on current injection active drive method of SiC MOSFET with transient voltage and current spike and oscillation suppression[J]. Proceedings of the CSEE, 2019, 39(19):5666-5673. (in Chinese) [22] LING Y T, ZHAO Z M, ZHU Y C. A self-regulating gate driver for high-power IGBTs[J]. IEEE Transactions on Power Electronics, 2021, 36(3):3450-3461. [23] LING Y T, ZHAO Z M, ZHU Y C, et al. An advanced self-regulating gate driver for IGBTs[C]//International Conference on High Voltage Direct Current (HVDC). Xi'an, China, 2020.
2021, Vol. 61 
