High-voltage IGBTs series converter bus bar design and stray parameter analysis
Hualong YU,Zhengming ZHAO(),Liqiang YUAN,Ting LU,shiqi JI
State Key Laboratory of Control and Simulation of Power systems and Generation Equipment, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
High-voltage IGBTs series are one of the most effective means to improve converter voltage levels and capacities. However, the complex mechanical structure when the devices are used in series complicates bus bar design and stray parameter modeling. The results may not be accurate if the conventional PEEC method is used. This paper describes the bus bar design principles and ways to improve the PEEC method when extracting large complex structure bus bar stray parameters. The bus bar parameter model is based on the partitioning calculation result. The influence of stray parameters during the switch transient process is illustrated by simulations and tests on a 4.5kV/600A HVIGBTs series experimental platform with consideration of the diode forward recovery characteristics. The results illustrate the accuracy and practicality of the method and how bus bar design effectively reduces the stray parameters and creates favorable conditions for active control.
Caponet C, Profumo D, Doncker W, et al.Low stray inductance bus bar design and construction for good EMC performance in power electronic circuits [J]. IEEE Transactions on Power Electronics, 2002, 2(17): 225-231.
[2]
Zare F, Ledwich F. Reduced layer planar busbar for voltage source inverters[J]. IEEE Transactions on Power Electronics, 2002, 17(4): 508-516.
[3]
YUAN Liqiang, YU Hualong, WANG Xuesong, et al.Design, simulation and analysis of the low stray inductance bus bar for voltage source inverters [C]// Proc of 14th Int Conf on Electrical Machines and Systems (ICEMS 2011). Beijing, China: IEEE Press, 2011: 1-5.
[4]
JIShiqi, ZHAO Zhengming, YUAN Liqiang, et al.HVIGBT physical model analysis during transient[J]. IEEE Transactions on Power Electronics, 2013, 28(5): 2616-2624.
[5]
YUANLiqiang, ZHAO Zhengming, BAI Hua, et al.The IGCT test platform for voltage source inverters [C]// Proc of The Fifth Int Conf on Power Electronics and Drive Systems. Beijing, China: IEEE Press, 2003, 2: 1291-1294.
[6]
ZOU Gaoyu, ZHAO Zhengming, YUAN Liqiang. Study on DC busbar structure considering stray inductance for the back-to-back IGBT-based converter [C]// Proc of IEEE Applied Power Electronics Conference and Exposition, Long Beach, CA, USA: IEEE Press, 2013: 1213-1218.
[7]
YUAN Liqiang, YU Hualong, WANG Xuesong, et al.The Large-size Low-stray-parameter Planar Bus Bar for High Power IGBT-based Inverters [C]// Proc of 15th Int Conf on Electrical Machines and Systems. Sapporo, Japan: IEEE Press, 2012: 1-5.
[8]
Schanen J.L, Clavel E, Roudet J. Modeling of low inductive busbar connections[J]. Industry Applications Magazine, IEEE, 1996, 2(5): 39-43.
[9]
易荣, 赵争鸣, 袁立强. 高压大容量变换器中母排的优化设计[J]. 电工技术学报, 2008, 23(8): 94-100. YI Rong, ZHAO Zhengming, YUAN Liqiang. Busbar optimization design for high power converters[J]. Transactions of China Electro technical Society, 2008, 23(8): 94-100. (in Chinese)
[10]
李方正, 孙旭东, 黄立培, 等. 大容量变流器复杂形状直流母线的PEEC 建模[J]. 清华大学学报(自然科学版), 2009, 49(8): 1089-1092. LI Fangzheng, SUN Xudong, HUANG Lipei, et al.PEEC modeling of complex DC bus of high power converters[J]. Journal of Tsinghua University: Science and Technology, 2009, 49(8): 1089-1092. (in Chinese)
[11]
QIUZhiling, ZHANG Hongyan, CHEN Guozhu. Study and design of noninductive bus bar for high power switching converter [C]// Proc of Power Electronics and Motion Control Conference. Shanghai, China. IEEE Press, 2006, 2: 1-4.
[12]
Withanage R, Crookes W, Shammas N. Novel voltage balancing technique for series connection of IGBTs [C]// Proc of European Conf of Power Electronics and Applications. Aalborg, Denmark. IEEE Press, 2007: 1-10.
2014, Vol. 54 
),袁立强,鲁挺,姬世奇
