Stray inductance effects and optimal design of reverse bocking IGBT matrix converters
ZHANG Tieshan, JIANG Xiaohua
State Key Laboratory of Control and Simulation of Power System and Generation Equipment, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
Abstract：Stray inductances strongly affect switching device safety and performance in matrix converters. This paper analyses the effects of stray inductances and describes the main circuit optimization principles for reverse blocking IGBT (RB-IGBT) matrix converters. First of all, the multiple stages of an RB-IGBT turn-off transient are analyzed based on the switching device characteristics. The snubber capacitor affects the output voltage error caused by the forced commutation process and distorts the waveform. Simulations indicate that the main circuit stray inductance and the snubber capacitor have the greatest influence on RB-IGBT turn-off transient duration and surge voltage. Larger snubber capacitors give more waveform distortion. Design optimization principles are used to designan RB-IGBT matrix converter prototype. Tests show that the maximum switching surge voltage is 375 V without any snubber circuits. The practicality of the busbar structure design is validated by measurements of the output current from the matrix converter prototype.
Wheeler P W, Rodriguez J, Clare J C, et al. Matrix converters:A technology review[J]. IEEE Transactions on Industrial Electronics, 2002, 49(2):276-288.
[2]
Empringham L, Kolar J W, Rodriguez J, et al. Technological issues and industrial application of matrix converters:A review[J]. IEEE Transactions on Industrial Electronics, 2013, 60(10):4260-4271.
[3]
El-Khoury C N, Kanaan H Y, Mougharbel I, et al. A review of matrix converters applied to PMSG based wind energy conversion systems[C]//Proceedings of the 39th IEEE Industrial Electronics Society Annual Conference. Vienna, Austria:IEEE Press, 2013:7784-7789.
[4]
梅杨, 孙凯, 黄立培. 矩阵式变换器的输入功率因数控制[J]. 清华大学学报(自然科学版), 2009, 49(4):469-472.MEI Yang, SUN Kai, HUANG Lipei. Input power factor control of matrix converter[J]. Journal of Tsinghua University (Science & Technology), 2009, 49(4):469-472. (in Chinese)
[5]
易容, 赵争鸣, 袁立强. 高压大容量变换器中母排的优化设计[J]. 电工技术学报, 2008, 23(8):94-100.YI Rong, ZHAO Zhengming, YUAN Liqiang. Busbar optimization design for high power converters[J]. Transactions of China Electrotechnical Society, 2008, 23(8):94-100. (in Chinese)
[6]
于华龙, 赵争鸣, 袁立强, 等. 高压IGBT串联变换器直流母排设计与杂散参数分析[J]. 清华大学学报(自然科学版), 2014, 54(4):540-545.YU Hualong, ZHAO Zhengming, YUAN Liqiang, et al. High-voltage IGBTs series converter bus bar design and stray parameter analysis[J]. Journal of Tsinghua University (Science & Technology), 2014, 54(4):540-545. (in Chinese)
[7]
Lukas M, Jonathan W K. Effects of stray inductance on hard-switched switched capacitor[C]//Proceedings of Power and Energy Conference at Illinois (PECI). Champaign, IL, USA:IEEE Press, 2014:1-5.
[8]
陈材, 裴雪军, 陈宇, 等. 基于开关瞬态过程分析的大容量变换器杂散参数抽取方法[J]. 中国电机工程学报, 2011, 31(21):40-47.CHEN Cai, PEI Xuejun, CHEN Yu, et al. A stray parameter extraction method for high power converters based on turn-on/off transient analysis[J]. Proceedings of the CSEE, 2011, 31(21):40-47. (in Chinese)
[9]
ZHOU Daning, SUN Kai, LIU Zhichao, et al. A novel driving and protection circuit for reverse-blocking IGBT used in matrix converter[J]. IEEE Transactions on Industry Applications, 2007, 43(1):3-13.
[10]
Itoh J I, Sato I, Odaka A, et al. A novel approach to practical matrix converter motor drive system with reverse blocking IGBT[J]. IEEE Transactions on Power Electronics, 2005, 20(6):1356-1363.
[11]
Safari S, Castellazzi A, Wheeler P. Experimental study of parasitic inductance influence on SiC MOSFET switching performance in matrix converter[C]//Proceedings of the 15th European Conference on Power Electronics and Applications (EPE). Lille, France:IEEE Press, 2013:1-9.
[12]
Galkin I, Suzdalenko A. Analysis of the actual current paths of an integrated matrix converter[C]//Proceedings of the 12th International Conference on Electrical Machines and Systems (ICEMS). Tokyo, Japan:IEEE Press, 2009:1-5.
[13]
Galkin I, Suzdalenko A. Possible design of bus bar construction for matrix converter[C]//Proceedings of the 9th International Conference on Electrical Power Quality and Utilisation. Barcelona, Spain:IEEE Press, 2007:1-5.
[14]
Hefner A R. An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)[J]. IEEE Transactions on Power Electronics, 1991, 6(2):208-219.
[15]
ZHANG Tieshan, XU Jin, YAO Pengfei, et al. Analysis of efficiency and harmonics for reverse blocking IGBT matrix converters[C]//Proceedings of the 8th IEEE International Power Electronics and Motion Control Conference. Hefei, China:IEEE Press, 2016:1236-1240.
2017, Vol. 57 
