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清华大学学报(自然科学版)  2020, Vol. 60 Issue (6): 530-536    DOI: 10.16511/j.cnki.qhdxxb.2019.22.037
  电机工程 本期目录 | 过刊浏览 | 高级检索 |
双主动全桥变换器的高频振荡影响因素
崔彬, 李欣阳, 薛芃, 蒋晓华
清华大学 电机工程与应用电子技术系, 电力系统及大型发电设备控制和仿真国家重点实验室, 北京 100084
Factors influencing high frequency oscillations in dual active bridge converters
CUI Bin, LI Xinyang, XUE Peng, JIANG Xiaohua
State Key Laboratory of Power System and Generation Equipment, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
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摘要 随着新一代宽禁带半导体器件在双主动全桥(DAB)变换器中的应用,变换器交流侧出现较高的电压上升率(dv/dt)。高dv/dt含有丰富的高频谐波成分,引起变压器分布电容与系统感性元件之间产生严重的高频振荡问题。该文基于高频变压器π型三电容分布参数模型,推导了变压器端口电压高频振荡的时域解析方程,定量分析了dv/dt和变压器分布电容对高频振荡幅值的影响,并通过调节系统dv/dt实现了对高频振荡幅值的抑制。搭建了DAB变换器实验样机系统和对应的LTspice电路仿真模型,验证了高频振荡问题理论分析的合理性和正确性。
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崔彬
李欣阳
薛芃
蒋晓华
关键词 双主动全桥变换器高频振荡分布电容高速开关器件    
Abstract:The new generation of power devices with wide bandgap semiconductors in dual active bridge (DAB) converters can produce higher voltage rise rates (dv/dt) on the alternating current (AC) side of the DAB converter. However, the many harmonic components in dv/dt lead to undesired high frequency oscillations between the distributed capacitance of the transformer and the inductive components of the DAB converter. This paper presents a time domain analytical equation for the high frequency oscillations of the transformer voltage in a π-type distributed parameter transformer model with three capacitances. The various factors influencing the oscillations are analyzed mathematically with the conclusions that dv/dt and the transformer capacitance are the main factors influencing the high frequency oscillations and that the oscillation amplitudes are reduced by reducing dv/dt in the converter. This paper also uses an experimental DAB prototype together with its corresponding circuit model based on LTspice to verify the theoretical analysis of the high frequency oscillations by simulations and experiments.
Key wordsdual active bridge converter    high frequency oscillations    distributed capacitance    high-speed switching device
收稿日期: 2019-05-10      出版日期: 2020-04-27
基金资助:国家自然科学基金面上项目(51877114)
通讯作者: 蒋晓华,教授,E-mail:jiangxiaohua@tsinghua.edu.cn     E-mail: jiangxiaohua@tsinghua.edu.cn
引用本文:   
崔彬, 李欣阳, 薛芃, 蒋晓华. 双主动全桥变换器的高频振荡影响因素[J]. 清华大学学报(自然科学版), 2020, 60(6): 530-536.
CUI Bin, LI Xinyang, XUE Peng, JIANG Xiaohua. Factors influencing high frequency oscillations in dual active bridge converters. Journal of Tsinghua University(Science and Technology), 2020, 60(6): 530-536.
链接本文:  
http://jst.tsinghuajournals.com/CN/10.16511/j.cnki.qhdxxb.2019.22.037  或          http://jst.tsinghuajournals.com/CN/Y2020/V60/I6/530
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
[1] ZHAO B, SONG Q, LIU W H, et al. Overview of dual-active-bridge isolated bidirectional DC-DC converter for high-frequency-link power-conversion system[J]. IEEE Transactions on Power Electronics, 2014, 29(8):4091-4106.
[2] ZHANG Z L, CAI Y Y, ZHANG Y, et al. A distributed architecture based on microbank modules with self-reconfiguration control to improve the energy efficiency in the battery energy storage system[J]. IEEE Transactions on Power Electronics, 2015, 31(1):304-317.
[3] XUAN Y, YANG X, CHEN W J, et al. A novel NPC dual-active-bridge converter with blocking capacitor for energy storage system[J/OL]. IEEE Transactions on Power Electronics, 2019. DOI:10.1109/TPEL.2019.2898454.
[4] RYLKO M S, HARTNETT K J, HAYES J G, et al. Magnetic material selection for high power high frequency inductors in DC-DC converters[C]//Proceedings of the 2009 24th Annual IEEE Applied Power Electronics Conference and Exposition. Washington, DC, USA, 2009.
[5] XUE F, YU R Y, HUANG A Q. A 98.3% efficient GaN isolated bidirectional DC-DC converter for DC microgrid energy storage system applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(11):9094-9103.
[6] TRIPATHI A, MADHUSOODHANAN S, MAINALI K, et al. Series injection enabled full ZVS light load operation of a 15kV SiC IGBT based dual active half bridge converter[C]//Proceedings of 2016 IEEE Applied Power Electronics Conference and Exposition. Long Beach, USA, 2016.
[7] CHATTOPADHYAY R, JUDS M A, OHODNICKI P R, et al. Modelling, design and analysis of three limb high frequency transformer including transformer parasitics, for SiC Mosfet based three port DAB[C]//Proceedings of the IECON 2016:42nd Annual Conference of the IEEE Industrial Electronics Society. Florence, Italy, 2016.
[8] WANG N Z, JIA H Y, TIAN M F, et al. Impact of transformer stray capacitance on the conduction loss in a GaN-based LLC resonant converter[C]//Proceedings of the 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia. Kaohsiung, China, 2017.
[9] QIN Z, SHEN Z, BLAABJERG F. Modelling and analysis of the transformer current resonance in dual active bridge converters[C]//Proceedings of 2017 IEEE Energy Conversion Congress and Exposition. Cincinnati, USA, 2017:4520-4524.
[10] OUYANG Z W, THOMSEN O C, ANDERSEN M A E. Optimal design and tradeoff analysis of planar transformer in high-power DC-DC converters[J]. IEEE Transactions on Industrial Electronics, 2012, 59(7):2800-2810.
[11] SAKET M A, SHAFIEI N, ORDONEZ M. LLC converters with planar transformers:Issues and mitigation[J]. IEEE Transactions on Power Electronics, 2017, 32(6):4524-4542.
[12] LU H Y, ZHU J G, HUI S Y R. Experimental determination of stray capacitances in high frequency transformers[J]. IEEE Transactions on Power Electronics, 2003, 18(5):1105-1112.
[13] BIERNACKI J, CZARKOWSKI D. High frequency transformer modeling[C]//Proceedings of 2001 IEEE International Symposium on Circuits and Systems. Sydney, Australia, 2001.
[14] LIU C, QI L, CUI X, et al. Wideband mechanism model and parameter extracting for high-power high-voltage high-frequency transformers[J]. IEEE Transactions on Power Electronics, 2016, 31(5):3444-3455.
[15] LIU C, QI L, CUI X, et al. Experimental extraction of parasitic capacitances for high-frequency transformers[J]. IEEE Transactions on Power Electronics, 2017, 32(6):4157-4167.
[16] MUSZNICKI P, CHRZAN P J, RUCINSKI M, et al. Adaptive estimation of the transformer stray capacitances for DC-DC converter modelling[J]. IET Power Electronics, 2016, 9(15):2865-2870.
[17] BIELA J, KOLAR J W. Using transformer parasitics for resonant converters:A review of the calculation of the stray capacitance of transformers[J]. IEEE Transactions on Industry Applications, 2008, 44(1):223-233.
[18] DALESSANDRO L, DA SILVEIRA CAVALCANTE F, KOLAR J W. Self-capacitance of high-voltage transformers[J]. IEEE Transactions on Power Electronics, 2007, 22(5):2081-2092.
[19] THUMMALA P, SCHNEIDER H, ZHANG Z, et al. Investigation of transformer winding architectures for high-voltage (2.5kV) capacitor charging and discharging applications[J]. IEEE Transactions on Power Electronics, 2016, 31(8):5786-5796.
[20] IEEE. IEEE recommended practice for testing electronics transformers and inductors:IEEE 389-1996[S]. 1996.
[21] 刘晨. 高压高频变压器宽频建模方法及其应用研究[D]. 北京:华北电力大学(北京), 2017. LIU C. Wideband modeling method and its application of high-voltage high-frequency transformers[D]. Beijing:North China Electric Power University (Beijing), 2017. (in Chinese)
[22] ZHAO B, SONG Q, LIU W H. Power characterization of isolated bidirectional dual-active-bridge DC-DC converter with dual-phase-shift control[J]. IEEE Transactions on Power Electronics, 2012, 27(9):4172-4176.
[23] MCLYMAN C W T. Transformer and inductor design handbook[M]. 4th ed. Boca Raton, USA:CRC Press, 2016.
[24] JUNG J H, KIM H S, RYU M H, et al. Design methodology of bidirectional CLLC resonant converter for high-frequency isolation of DC distribution systems[J]. IEEE Transactions on Power Electronics, 2013, 28(4):1741-1755.
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