Abstract：An on-chip 0~20 GHz attenuator was developed based on a π-type polysilicon resistive network as low cost attenuators with adjustable size that are compatible with other circuits. The sheet resistance(100~400Ω/sq) of the polysilicon resistor can be controlled by varying the boron-doping concentrations(5×1018~1.4×1020 cm-3) and post-annealing conditions(950~1050℃, 10~30 min). The resistance error was controlled less than 4%. The on-chip attenuator size can be set by selecting the sheet resistance for the on-chip 10 dB and 20 dB attenuating resistive networks. The devices were modelled in 3-D with HFSS with the simulation results showing excellent performance. The attenuation accuracies of the 10 dB and 20 dB attenuators were 0.26 dB and 0.04 dB over the entire frequency band(0~20 GHz), while the voltage standing wave ratios(VSWR) were less than 1.13 and 1.29, respectively. Both resistive networks were 265μm×270μm in size while both attenuators were less than 1000μm×800μm in size. These high accuracy attenuators can be used in microwave test instruments.
郭昕, 李孟委, 龚著浩, 刘泽文. 基于π型多晶硅电阻网络的片上衰减器[J]. 清华大学学报（自然科学版）, 2015, 55(11): 1264-1268.
GUO Xin, LI Mengwei, GONG Zhuhao, LIU Zewen. On-chip attenuator based on π-type polysilicon resistive network. Journal of Tsinghua University(Science and Technology), 2015, 55(11): 1264-1268.
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