On-chip attenuator based on π-type polysilicon resistive network

doi:10.16511/j.cnki.qhdxxb.2015.21.002

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Abstract An on-chip 0~20 GHz attenuator was developed based on a π-type polysilicon resistive network as low cost attenuators with adjustable size that are compatible with other circuits. The sheet resistance(100~400Ω/sq) of the polysilicon resistor can be controlled by varying the boron-doping concentrations(5×10¹⁸~1.4×10²⁰ cm^-3) and post-annealing conditions(950~1050℃, 10~30 min). The resistance error was controlled less than 4%. The on-chip attenuator size can be set by selecting the sheet resistance for the on-chip 10 dB and 20 dB attenuating resistive networks. The devices were modelled in 3-D with HFSS with the simulation results showing excellent performance. The attenuation accuracies of the 10 dB and 20 dB attenuators were 0.26 dB and 0.04 dB over the entire frequency band(0~20 GHz), while the voltage standing wave ratios(VSWR) were less than 1.13 and 1.29, respectively. Both resistive networks were 265μm×270μm in size while both attenuators were less than 1000μm×800μm in size. These high accuracy attenuators can be used in microwave test instruments.

Keywords polysilicon resistor resistive attenuation network on-chip attenuator

ZTFLH:

TN385

Issue Date: 15 November 2015

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	GUO Xin
	LI Mengwei
	GONG Zhuhao
	LIU Zewen

Cite this article:

GUO Xin,LI Mengwei,GONG Zhuhao, et al. On-chip attenuator based on π-type polysilicon resistive network[J]. Journal of Tsinghua University(Science and Technology), 2015, 55(11): 1264-1268.

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http://jst.tsinghuajournals.com/EN/10.16511/j.cnki.qhdxxb.2015.21.002 OR http://jst.tsinghuajournals.com/EN/Y2015/V55/I11/1264

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