AlN/α-SiC based surface acoustic wave resonator and its strain response

doi:10.16511/j.cnki.qhdxxb.2016.22.039

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Abstract The need to monitor the health of gas turbines, geothermal wells and other equipment in harsh environments requires micro and nano sensors for harsh environments. This paper introduces an AlN/α-SiC based surface acoustic wave resonator. The strain coefficient factor (SCF) of the resonator is analyzed and calculated theoretically based on the strain field and a proposed strain-velocity relationship. The resonator is micro-fabricated and characterized to determine the SCF of the fabricated resonator. An AlN/α-SiC resonator with a 1.5 μm thick AlN layer, has an SCF of 0.515×10^-6/με at 298 K, which matches well with the calculated results.

Keywords surface acoustic wave resonator aluminum nitride silicon carbide strain response

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TN65

Issue Date: 15 October 2016

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	CHEN Shuo
	YOU Zheng

Cite this article:

CHEN Shuo,YOU Zheng. AlN/α-SiC based surface acoustic wave resonator and its strain response[J]. Journal of Tsinghua University(Science and Technology), 2016, 56(10): 1061-1065.

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http://jst.tsinghuajournals.com/EN/10.16511/j.cnki.qhdxxb.2016.22.039 OR http://jst.tsinghuajournals.com/EN/Y2016/V56/I10/1061

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