Design and fabrication of a <sup>63</sup>Ni thin film source for a <sup>63</sup>Ni-Si betavoltaic battery

doi:10.16511/j.cnki.qhdxxb.2017.22.042

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Abstract Directly preparation of a ⁶³Ni radioisotope source on the surface of a betavoltaic battery has problems such as low loadings, low activation, and functional deterioration of the PN junction. This research demonstrates the use of an indium tin oxide (ITO) membrane as a conductive layer to plate a ⁶³Ni source on the surface of a transparent glass package. Simulations of the radiation self-absorption effect give the optimal thickness of the ⁶³Ni-Si betavoltaic battery. Then, a 180 nm thick ITO conductive membrane is prepared on a 400 μm thick glass substrate via magnetron sputtering. ⁶³Ni is then electroplated on the ITO membrane surface. The micro-morphology and the Ni-electroplated membrane thickness are characterized. The electrical capabilities of the ⁶³Ni-Si betavoltaic battery fabricated based on this radiation source preparation method are then simulated. The results show that irradiation of a 2 μm thick, 7.25×10⁸ Bq activity, 36 mm² radiation source gives a radioisotope battery that can export 85.4 nW output power.

Keywords betavoltaic battery ⁶³Ni electroplate radioisotope source

ZTFLH:

O571.33

Issue Date: 15 August 2017

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	LI Hao
	ZHANG Gaofei
	YOU Zheng

Cite this article:

LI Hao,ZHANG Gaofei,YOU Zheng. Design and fabrication of a ⁶³Ni thin film source for a ⁶³Ni-Si betavoltaic battery[J]. Journal of Tsinghua University(Science and Technology), 2017, 57(8): 810-814.

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http://jst.tsinghuajournals.com/EN/10.16511/j.cnki.qhdxxb.2017.22.042 OR http://jst.tsinghuajournals.com/EN/Y2017/V57/I8/810

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