AlN/&alpha;-SiC based surface acoustic wave resonator and its strain response

CHEN Shuo; YOU Zheng

doi:10.16511/j.cnki.qhdxxb.2016.22.039

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Journal of Tsinghua University(Science and Technology) ›› 2016, Vol. 56 ›› Issue (10) : 1061-1065. DOI: 10.16511/j.cnki.qhdxxb.2016.22.039

AlN/α-SiC based surface acoustic wave resonator and its strain response

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Abstract

The need to monitor the health of gas turbines, geothermal wells and other equipment in harsh environments requires micro and nano sensors for harsh environments. This paper introduces an AlN/α-SiC based surface acoustic wave resonator. The strain coefficient factor (SCF) of the resonator is analyzed and calculated theoretically based on the strain field and a proposed strain-velocity relationship. The resonator is micro-fabricated and characterized to determine the SCF of the fabricated resonator. An AlN/α-SiC resonator with a 1.5 μm thick AlN layer, has an SCF of 0.515×10^-6/με at 298 K, which matches well with the calculated results.

Key words

surface acoustic wave resonator / aluminum nitride / silicon carbide / strain response

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CHEN Shuo, YOU Zheng. AlN/α-SiC based surface acoustic wave resonator and its strain response[J]. Journal of Tsinghua University(Science and Technology). 2016, 56(10): 1061-1065 https://doi.org/10.16511/j.cnki.qhdxxb.2016.22.039

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