Stray inductance effects and optimal design of reverse bocking IGBT matrix converters

ZHANG Tieshan; JIANG Xiaohua

doi:10.16511/j.cnki.qhdxxb.2017.21.030

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Journal of Tsinghua University(Science and Technology) ›› 2017, Vol. 57 ›› Issue (11) : 1212-1219. DOI: 10.16511/j.cnki.qhdxxb.2017.21.030

ELECTRICAL ENGINEERING

Stray inductance effects and optimal design of reverse bocking IGBT matrix converters

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Abstract

Stray inductances strongly affect switching device safety and performance in matrix converters. This paper analyses the effects of stray inductances and describes the main circuit optimization principles for reverse blocking IGBT (RB-IGBT) matrix converters. First of all, the multiple stages of an RB-IGBT turn-off transient are analyzed based on the switching device characteristics. The snubber capacitor affects the output voltage error caused by the forced commutation process and distorts the waveform. Simulations indicate that the main circuit stray inductance and the snubber capacitor have the greatest influence on RB-IGBT turn-off transient duration and surge voltage. Larger snubber capacitors give more waveform distortion. Design optimization principles are used to designan RB-IGBT matrix converter prototype. Tests show that the maximum switching surge voltage is 375 V without any snubber circuits. The practicality of the busbar structure design is validated by measurements of the output current from the matrix converter prototype.

Key words

matrix converter / reverse blocking IGBT (RB-IGBT) / stray inductance / optimal design

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ZHANG Tieshan, JIANG Xiaohua. Stray inductance effects and optimal design of reverse bocking IGBT matrix converters[J]. Journal of Tsinghua University(Science and Technology). 2017, 57(11): 1212-1219 https://doi.org/10.16511/j.cnki.qhdxxb.2017.21.030

References

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