Improvement of SiC MOSFET based converters with self-regulating drive

LING Yatao; ZHAO Zhengming

doi:10.16511/j.cnki.qhdxxb.2021.22.023

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Journal of Tsinghua University(Science and Technology) ›› 2021, Vol. 61 ›› Issue (10) : 1079-1087. DOI: 10.16511/j.cnki.qhdxxb.2021.22.023

POWER SYSTEMS

Improvement of SiC MOSFET based converters with self-regulating drive

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Abstract

The active gate drive (AGD) method has been developed to optimize the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) switching behavior by controlling the gate side. However, verification of current AGD methods has been limited to double-pulse tests, which fail to show practical values for AGD methods in converters and fail to show the AGD capabilities for continuous operations. The authors have presented an AGD method targeting insulted gate bipolar transistors (IGBTs). This paper ajusts this AGD method for SiC MOSFETs with parameter compensation. The accuracy of this modified AGD method is then compared with conventional gate drives (CGD) and existing AGD methods via double-pulse tests. In the double-pulse tests, this AGD method reduces the turn-on delay and its loss by 53% and 30%, and reduces the turn-off delay and its loss by 65% and 67%. This AGD method is then applied to a Buck converter to verify how it improves the switching spikes and converter efficiency. For a given spike, this AGD method improves the converter efficiency by 0.3% to 1% compared with the CGD method.

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SiC metal-oxide-semiconductor field-effect transistor (MOSFET) / non-ideal switching characteristics / active gate drive (AGD) / converter

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LING Yatao, ZHAO Zhengming. Improvement of SiC MOSFET based converters with self-regulating drive[J]. Journal of Tsinghua University(Science and Technology). 2021, 61(10): 1079-1087 https://doi.org/10.16511/j.cnki.qhdxxb.2021.22.023

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