主电路杂散电感是影响矩阵变换器开关器件可靠运行和整体性能的重要因素。该文对基于逆阻型IGBT（RB-IGBT）的矩阵变换器中杂散电感和吸收电容的影响进行分析，并由此研究主电路结构优化设计方法。首先分析了杂散电感及吸收电容对矩阵变换器中双向开关器件关断暂态过程的影响，给出了吸收电容引起矩阵变换器波形畸变的原因。基于RB-IGBT行为模型的仿真结果表明，矩阵变换器主电路杂散电感及吸收电容对双向开关换流暂态各个阶段持续时间及尖峰电压的影响并不相同。然后提出一种减小换流回路杂散电感的主电路连线与器件布局优化设计方法，归纳分析了基本设计原则，并以此构建了基于RB-IGBT的矩阵变换器样机实验平台。该样机平台下的单管多脉冲测试实验结果表明，不同换流回路下的开关器件关断电压尖峰最大值为375 V。通过对比主电路结构优化前后所测输出电流波形及谐波频谱可知，经过主电路结构优化设计后的样机平台在保证系统运行可靠的同时能获得更高的波形质量。
Stray inductances strongly affect switching device safety and performance in matrix converters. This paper analyses the effects of stray inductances and describes the main circuit optimization principles for reverse blocking IGBT (RB-IGBT) matrix converters. First of all, the multiple stages of an RB-IGBT turn-off transient are analyzed based on the switching device characteristics. The snubber capacitor affects the output voltage error caused by the forced commutation process and distorts the waveform. Simulations indicate that the main circuit stray inductance and the snubber capacitor have the greatest influence on RB-IGBT turn-off transient duration and surge voltage. Larger snubber capacitors give more waveform distortion. Design optimization principles are used to designan RB-IGBT matrix converter prototype. Tests show that the maximum switching surge voltage is 375 V without any snubber circuits. The practicality of the busbar structure design is validated by measurements of the output current from the matrix converter prototype.
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