接触不良引发的发光连接温度高、隐蔽性强、普遍产生于电气线路中，是诱发电气火灾的重要引燃热源之一，涉及铜氧化、传热、电场间的复杂耦合与相互作用。为探究发光连接产生过程中关键参数的动态变化，该文通过构建发光连接实验平台，测得铜氧化物桥生长速率、电阻增大速率和温度，揭示了铜氧化物、电阻和温度相互作用规律。实验结果表明：铜氧化物桥长度和电阻均随时间线性增大；温度先升高，最终稳定在1 400~1 600℃；随电流增大，铜氧化物桥生长速率增大，生长持续时间延长，电阻增大速率先增大后减小。接触不良引发发光连接是氧化程度加深、铜氧化物电阻率随电流改变、铜氧化物热容随温度变化等共同作用的结果。
Glowing contacts triggered by poor electrical contact are one of the most important ignition sources for fires. The glowing contacts with high temperature are commonly hidden in electric wires. The glowing contact involves complex coupling between the copper oxidation, heat transfer, and electric field. The relationships between the key parameters are investigated experimentally by measuring the growth rate of the oxide bridge length as well as the glowing contact resistance and temperature. The results show that the oxide bridge length and the glowing contact resistance increase with time. The maximum contact temperature increases with time up to 1 400-1 600℃. Increasing currents increase the oxide bridge growth rate and growth time. The increasing rate of the resistance first increases and then decreases with the current increase. The results further show that the glowing contact is due to interactions between the oxidation extent, the changes in the copper oxide resistivity with the current, and the increases in the specific heat with temperature.
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